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改进的二步法生长双层、异型硅外延材料
Improved Two-Step Way for Growing Double-Layer,Heier-Type Si Epitaxial Structure
【摘要】 在双层、异型硅外延中,通常采用预通掺杂剂二步外延法。本文对掺杂剂预通过程中产生的气一固扩散进行理论及实验研究,分析了预通条件(温度、时间、预通量等)对气一团扩散的影响,提出了减小P-N过渡区改进的二步外延法。
【Abstract】 The two-step way of pre-entering dopant was usually used for double-layer, heier-type Si epitaxial structure. In this paper, the gas-solid diffusion produced during the pre-entering dopant has been studied theoretically and experimentally. The effect of pre-entering conditions on the gas-solid diffusion has been analyzed. The Improved two-step way of dicreased P-N transition region is given.
【关键词】 硅外延;
双层;
异型;
自稀释;
过渡区;
二步法;
【Key words】 Si Epitaxy; Double-Layer; neter-Type; Auto-Diluting; Transition Region; Two-Step Way;
【Key words】 Si Epitaxy; Double-Layer; neter-Type; Auto-Diluting; Transition Region; Two-Step Way;
- 【文献出处】 固体电子学研究与进展 ,RESEARCH & PROGRESS OF SOLIA STATE ELECTRONICS , 编辑部邮箱 ,1994年01期
- 【分类号】TN304.120.54
- 【被引频次】7
- 【下载频次】51