【摘要】 本文研究了Nb₂O₅和Sb₂O₃施主掺杂对TiO₂瓷的半导化和电容—压敏夏合功能特性的影响,施主掺杂的最佳量是0.5mol%,结果表明.Nb₂O₅掺杂能较大的降低TiO₂瓷的电阻率和提高其介电常数.掺杂Nb₂O₅和Sb₂O₃的TiO₂瓷,均呈现优异的电压—电流的非线性关系,具有较低的初始电压,低的泄漏电流和较大的非线性系数.更多还原

【Abstract】 The effect of Nb2O5 or Sb2O3 donor doping on semiconductarization and composite function characteristics of capacitance - varistor of TiO2 ceramic have been investigated in the present work. The optimum addition of donor doping has been found to be 0. 5 mol % .The results show that Nb2O5 doping can considerably reduce the resistivity and increase the dielectrie constant of TiO2 ceramic. The Nb2O5 and Sb2Os - doped TiO2 ceramic exhibits an excellent non-linearity in the voltage current relationship with low threshold voltage,low cureent leakage and large non - linear coefficient.更多还原