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G_aP-LPE过程中掺N浓度的测定及N浓度对发光效率的影响
DETERMINATION OF NITROGEN DOPING CONCENTRATION IN G_aP─LPE AND THE EFFECT OF NITROGEN ON LIGHT EMITTING EFFICIENCY
【摘要】 本文叙述了G_aP单晶衬底在液相外延过程中掺N浓度的测定方法;并研究了在1040℃起始外延温度下,不同的掺N浓度对材料发光效率的影响。
【Abstract】 In this paper,a determination method of nitrogen doping concentration in liquid phase epi-taxy of G_aP single crystal substrate is reported,and the effect of different nitrogen doping con-centrations on the light emitting efficiency is also studied at the initial epitaxy temperature of1040℃
【关键词】 G_aP;
液相外延;
N浓度;
发光效率;
【Key words】 G_aP; liquid phase epitaxy; concentration; light─emitting efficiency;
【Key words】 G_aP; liquid phase epitaxy; concentration; light─emitting efficiency;
- 【文献出处】 甘肃科学学报 ,JOURNAL OF GANSU SCIENCES , 编辑部邮箱 ,1994年03期
- 【分类号】O657.3
- 【下载频次】15