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邻苯二甲酸氢铊(TAP)晶体在不同温度区间结晶状态的研究
Study on TAP Crystal in Crystallization States under Different Ranges of Temperature
【摘要】 本文采用热分析法分别测定出40~50℃生长的TAP晶体(I)和50~70℃生长的TAP晶体(Ⅱ)两样品于35~140℃温区内均没有任何脱水及相变峰。同时分别对TAP晶体(I)和(Ⅱ)进行X射线粉末衍射物相分析和x射线双晶衍射实验,结果发现两种样品的衍射数据及衍射参数吻合较好。实验结果进一步证实,40~50℃下生长的TAP晶体没有出现水合物,而且和50℃以上生长的TAP晶体具有相同的晶体结构。因此认为TAP晶体生长的温度区间可以扩展为40~70℃下进行。
【Abstract】 This article has found that there are no hydroextra and phase change peak in TAP(I)and TAP(Ⅱ)crystal under 35~100℃temperaturerange by means of thermal analysis. Through X-raydiffraction experiments on TAP crystal developedunder 40~50℃ and 50~70℃ temperature rangesrespectively,we discoverd that the diffrected dataand diffrected parameter of the above two specimenshave a rather good coincidence. Therefore,wedraw the conclusion that there exists no hydrate inTAP crystal developed under 40~50℃ temperaturerange.
【Key words】 X-ray analyzer crystal; thalliumhydrogen phthalate; hydrate; diffrected data anddiffrected pararneter.;
- 【文献出处】 功能材料 ,JOURNAL OF FUNCTIONAL MATERIALS , 编辑部邮箱 ,1994年01期
- 【分类号】O722
- 【下载频次】39