【摘要】 提出了热丝化学气相淀积法，在低温（６００－７５０℃）下成功地生长出硅上单晶碳化硅薄膜，Ｘ光衍射谱、喇曼光谱证实了外延膜的单晶结构，光致发光测量证明外延ＳｉＣ材料室温下可稳定发射可见光。更多还原

【Abstract】 A new SiC film growth method- hot-filament chemical vapor deposition(HFCVD) has beendeveloped,which is successfully used to grow single crystal SiC films on Si substrates at low temperature(600-750℃). The results of X-ray diffraction analysis and Raman scattering spectroscopy indicated theexistence of a monocrystalline structure of the epilayer.Visible light emitting was observed inphotoluminescence experiments at room temperature.更多还原