【摘要】 在材料研究和器件特性分析的基础上，采用分子束外延方法（ＭＢＥ），成功地研制出低阈值电流密度、高量子效率、折射率缓变分别限制异质结单量子阱结构（ＧＲＩＮ－ＳＣＨ－ＳＱＷ）大功率半导体激光器锁相列阵，最大线性输出功率为１．５Ｗ（室温，连续），激射波长８０８±４ｎｍ，光－电转换效率最高达６２％，器件寿命考核（２５℃，ＣＷ）超过１０００小时无明显退化。更多还原

【Abstract】 igh power, low threshold current density and high differential quantum efficiency graded-indexseparated-confinement-heterojunction single-quantum-well(GRIN-SCH-SQW)laser diode array was fabricated in our laboratory based on MBE and device characteristic analysis.Linear output power up to1.5W,lasting at 808+4nm(25,1W)and maximum electrical-optical conversion efficiency of 62%were obtained .Aging test(25,1W)showed no degradation after 1000hours.更多还原