节点文献
负电子亲和势GaAs光阴极的研究
Research on Negative Electron Affinity GaAs Photocathode
【摘要】 分析正、负电子亲和势在发射机理上的差别,重点阐述 GaAs 光阴极的设计原理。讨论这种阴极参数的设定依据,扼要介绍它的主要制作工艺。最后,和传统的光阴极作了比较,并就其优越性进行了综合性讨论。
【Abstract】 The principle of GaAs photocathode design is discribed by analyzing the dif- ferents between PEA and NEA on emission mechanism.Main manufacturing technique is introduced after discussing the select basis of the photocathode parameter.Finally,the ad- vantage of this photocathode over traditional one is also discussed.
【关键词】 负电子亲和势;
GaAs光阴极;
异质结;
表面势垒;
【Key words】 negative electron affinity; GaAs photocathode; heterojunction surface barrier;
【Key words】 negative electron affinity; GaAs photocathode; heterojunction surface barrier;
- 【文献出处】 光电子技术 ,Optoelectronic Technology , 编辑部邮箱 ,1994年03期
- 【分类号】TN304
- 【下载频次】104