【摘要】 用离子注入方法，将稀土离子Ｅｒ３＋注入到ｎ－Ｓｉ单晶中，通过对其低温（７７Ｋ）光致发光光谱的测量，研究其光学特性．结果表明，注入剂量控制在１×１０１２ｃｍ－２～１×１０１５ｃｍ－２范围，退火温度控制在９００℃～１１００℃时，样品的主要发光峰值位于１．５４μｍ左右．研究了样品的光致发光光谱随注入剂量、退火温度的变化关系，给出峰值在１．５４μｍ附近的未分辨开的谱线的半宽为１６．４ｍｅＶ．更多还原

【Abstract】 Abstract Erbium impurities in silicon have the important technological property of exhibiting sharp luminescence at 1.54μm which can be excited either optically or electrically. Erbium-doped silicon is very attractive for obtaining light-emitting devices in silica-based optical fibre communication systems. In this paper results of erbium-implanted silicon were presented.Er+ions were implanted into n-type silicon single crystal at room temperature. The range of ion doses investigated in this work varied from 1×10￣(12) to 1×10￣(15)cm￣(-2). After ion implantation, all of the samples were thermally annealed for 10min at temperature of 700℃～1100℃ with a dry nitrogen atmosphere. In order to test the optical properties of the erbium-implanted silicon samples, the low-temperature (77K) photoluminescence spectra were measured. The samples were excited by the 632, 8nm line of He-Ne laser. The luminescent signal was detected by a liquid-nitrogen-cooled germanium detector through MP-2 type monochromator. The更多还原