【摘要】 本文采用电化学选择性腐蚀工艺对ＧａＡｓ衬底蚀孔，在其上获得了大面积具有光滑表面的Ⅱ－Ⅵ族半导体多量子阱外延膜．通过在其表面蒸镀反射膜，制成了高质量的Ｆ－Ｐ腔，制备出ＺｎＳｅ－ＣｄＺｎＳｅ多量子阱Ｆ－Ｐ腔光双稳器件．更多还原

【Abstract】 elective anodic dissolution of GaAs substrate was used to obtain large area of ZnSe semiconductor superlattice and multiple quantum wells (MoWs) epilayers with smooth surface, and optical bistable device was fabricated by vacuum deposition of high reflec tive multiple layers on the smooth surface of the ZnSe-CdZnSe MoWs.更多还原