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BF2+注入多晶硅栅的SIMS分析
SIMS ANALYSIS OF BF +2 IMPLANTED Si-GATE
【摘要】 文本采用SIMS技术,分析了BF2+注入多晶硅栅退火前后F原子在多晶硅和SiO2中的迁移特性。结果表明,80keV,2×1015和5×1015cm-2 BF2+注入多晶硅栅经过900℃,30min退火后,部分F原子已扩散到SiOa中。F在多晶硅和SiO2中的迁移行为呈现不规则的特性,这归因于损伤缺陷和键缺陷对F原子的富集作用。
【Abstract】 The migration of fluorine atoms in poly-silicon and SiO2 of BF+2 implanted Si-gate before and after annealing has been analyzed using SIMS. The results show that a part of fluorine atoms of BFf implanted Si-gate with an energy of 80keV and doses of 2 × 1015 and 5 × 1015cm-2 after annealing diffiuse into SiO2 region of this gate. Anomalous migration of fluorine atoms is observed in both poly-silicon and SiO2. This is due to the collection of fluorine atoms in the regions of residual damage and bond defects.
【基金】 国家自然科学基金
- 【文献出处】 电子科学学刊 , 编辑部邮箱 ,1994年05期
- 【分类号】TN305
- 【被引频次】1
- 【下载频次】71