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Culnse2/CdS薄膜太阳电池的制备工艺

Preparing of CulnSe2/CdS heterojunction solar cells

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【作者】 李长健崔芮华谢小健朱践知孙健

【Author】 Li Changjian, Cui Ruihua, Xie Xiaojian,Zhu Jianzhi and Sun Jian Institute of photoelectron, Nankai Univ., Tianjin 300071

【机构】 南开大学光电子所

【摘要】 分别用三源共蒸发法和双源共蒸发法制备出CuInSe2(简称CIS)膜和CdS膜,p型CIS与n型CdS组成异质结太阳电池.提高此种太阳电池性能的关键是必须严格控制工艺条件使CIS膜达到合适的组分比和电阻率.在空气中退火能大幅度提高太阳电池性能.

【Abstract】 CuInSe2 film and CdS film are made by three-sources coevaporation and two-sources coevaporation respectively. Heterojunction solar cells are formed by p-type CuInSe2 film and n-type CdS film. The key of the improvement of such solar cells lies in strict control of process condition to make CuInSe2 film be of suitable elemental ratio and conductivity. Anneal in the air can greatly improve’the performance of solar cells.

【关键词】 共蒸发异质结太阳电池
【Key words】 CoevaporationHeterojunction solar cell
  • 【文献出处】 电源技术 ,Chinese Journal of Power Sources , 编辑部邮箱 ,1994年03期
  • 【分类号】TM914.4
  • 【被引频次】8
  • 【下载频次】210
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