【摘要】 测量了名义组分为Ｂｉ１．８Ｐｂ０．４Ｓｒ２Ｃａ２Ｃｕ３Ｏｙ厚膜在两种加场方式下，磁场分别平行和垂直于厚膜表面情况下的传输临界电流密度Ｊｃ与磁场Ｈ的关系，以及撤去外加磁场后的Ｊｃ。实验结果表明。样品的Ｈｃ１在１０７Ｇ（Ｈ⊥Ｃ－轴）和２４Ｇ（Ｈ∥Ｃ－轴附近。冻结磁通导致零场下的临界电流密度的Ｊｃ降低１２％左右。冻结磁通的磁场开始时随外加磁场增加而增大；而当Ｈ＞１２０Ｇ（Ｈ⊥Ｃ－轴）或Ｈ＞３０Ｇ（Ｈ∥Ｃ－轴）时，其大小与外加磁场无关。根据砖墙结构模型讨论了冻结磁通与样品钉扎中心的关系。更多还原

【Abstract】 The dependence of transport critical current density Jc on applied magnetic field H was measured at parallel and perpendicular to C-axis of thick film with nominal composition Bi1.8 Ph0.4Sr2Ca2Cu3O3 in two different applying field ways ZFC and FC, respectively.Jc was measured after cemoving the applied magnetic field in field-cooling. The results show the lower critical magnetic field Hc1 was near 107G (H⊥C-axis) and 25G (H∥ C-axis). The maximal temanent flux leads to Jcdecrease 12% at 0t .The zero-field frozen magnetic field caused by remanent flux increase with applied magnetic field at first; it becomes a constant when applied magnetic field exceeds 120G (H⊥C-axis) or 30G (H ∥C-axis). The relation of remanent flux and pinning centre was discussed by the brick wall model.更多还原