节点文献
用<111>硅的自停止腐蚀方法制作硅膜
Silicon Film Fabricated by Using Etch Stop Method of < 111 > - oriented Silicon
【摘要】 利用各向异性腐蚀和键合工艺,提出了一种新的自停止腐蚀方法,该方法可以得到大于1μm厚的均匀硅膜,可用于微传感器研制。
【Abstract】 Based on the anisotropic etching and bonding technobgy, a new method for etch stop is put forward. Silicon film with the thickness larger than lμm can be obtained by using the method, which is applied to the fabrication of microsensors.
【关键词】 异性腐蚀;
键合工艺;
硅膜;
微传感器;
【Key words】 Anisotropie etching Bonding technology Silicon film Microsensors;
【Key words】 Anisotropie etching Bonding technology Silicon film Microsensors;
- 【文献出处】 传感器技术 ,Journal of Transducer Technology , 编辑部邮箱 ,1994年02期
- 【分类号】TP212
- 【被引频次】3
- 【下载频次】150