【摘要】 在反应离子刻蚀（RIE）及等离子体刻蚀（PE）设备中,分别采用CF₄,SF₆,NF₃和C₇F₁₄,腐蚀剂气体,对（100）Si进行刻蚀.研究了工艺条件对刻蚀各向异性及均匀性的影响.结果表明,RIE的各向异性与均匀性均优于PE.RIE的各向异性值A与刻蚀气体中的添加剂成份有关,添加20%Ar时A最大值为5.4;添加20%C₂F₅Cl时,A值可高达10以上.在RIE中,CF₄和NF₃,的刻蚀均匀性优于SF₆,最佳刻蚀均匀性平均值优于5%,添加剂对刻蚀均匀性没有明显的影响.而PE显示各向同性的刻蚀特征,均匀性约为16.5%.并对各向异性及均匀性的起因作了解释.更多还原

【Abstract】 (100) Si is etched by using CF4, SF6, NF3 and C7F14 etchant in reactive ionetching (RIE) and plasma etching (PE) systems respectively. The experiments havethat anisotropy and uniformity are better in RIE than those in PE. Anisotropy is obvise-ly related to etchant gas composition and pressure,when 20% Ar is added to SF6, theanisotropy of 5. 4 is given. In addition to 20%C2F5Cl in SF6,anisotropy is above 10. Uni-formity of CF4 and NF3 is better than that of SF6. Uniformity of 5% has been gained inRIE. Plasma etching silicon is isotropic and its uniformity is about 16. 5%. Etch unifor-mity has not obvisely relation to addititonal gas compsition. A discussion of anisotropyand uniformity and their relation to process parameters is included.更多还原