【摘要】 用射频磁控反应溅射法在Si基片上沉积SnO₂超微粒薄膜,溅射过程中适量掺Pd,用IC技术制成气敏元件.实验结果表明:该元件在90℃左右时对氢气有极高的灵敏度,是一种薄膜化、集成化、高选择性的气敏元件.本文介绍薄膜制备、微观结构分析、元件设计及气敏特性测试.更多还原

【Abstract】 We have deposited Tin dioxide film with ultrafine partcle (U. F. P) on silicon substrateby magnetron RF reactive sputtering method. Appropriate Pd is doped in sputtering process, anda gas sensor is obtained by standard IC technique. The test indicates that the sensor has a veryhigh sensitivity to hydrogen gas at about 90℃. The significance of the sensor is that it is fabricat-ed with thin film. IC process compatibility, and the high selectivity. Preparation of SnO2 U. F. Pfilm, microstructure analysis, and characteristic of gas sensitivity of the device are presented inthis paper.更多还原