【摘要】 在ｎＷ～μＷ光功率下测试高增益穿通型ＡｌＧａＡｓ／ＧａＡｓ光电晶体管的直流参数：光电灵敏度、光电增益和电流增益。以峰值波长为８３０ｎｍ的ＡｌＧａＡｓ／ＧａＡｓ半导体激光器作光源，经光纤耦合与衰减，得到可变的光功率。测试结果表明，在３～１４Ｖ工作电压下，１μＷ入射光功率时光电增益为７１１３，４０～５０ｎＷ光功率时光电增益为３６９３，高于国内外报道的光电探测器的同类指标。更多还原

【Abstract】 Sensitivity,optical gain and current gain of a new model AlGaAs/GaAs punch-through phototransistor are measured.The illuminant is AlGaAs/GaAs semiconductor laser with peak wavelength of 830nm.By optical fibers coupling and attenuation,varied photo power are getted.At applied voltage of 3￣14V,optical gain of 7 113 and 3693 are obtained in the condition that input photo power are 1μW and 40￣50nW respectively.These values are the highest to similar dates reported in optical detectors.更多还原