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穿通型光电晶体管的直流特性测试
MEASUREMENTS OF THE DIRECT-CURRENT PROPERTIES OF A PUNCH-THROUGH PHOTOTRANSISTOR
【摘要】 在nW~μW光功率下测试高增益穿通型AlGaAs/GaAs光电晶体管的直流参数:光电灵敏度、光电增益和电流增益。以峰值波长为830nm的AlGaAs/GaAs半导体激光器作光源,经光纤耦合与衰减,得到可变的光功率。测试结果表明,在3~14V工作电压下,1μW入射光功率时光电增益为7113,40~50nW光功率时光电增益为3693,高于国内外报道的光电探测器的同类指标。
【Abstract】 Sensitivity,optical gain and current gain of a new model AlGaAs/GaAs punch-through phototransistor are measured.The illuminant is AlGaAs/GaAs semiconductor laser with peak wavelength of 830nm.By optical fibers coupling and attenuation,varied photo power are getted.At applied voltage of 3 ̄14V,optical gain of 7 113 and 3693 are obtained in the condition that input photo power are 1μW and 40 ̄50nW respectively.These values are the highest to similar dates reported in optical detectors.
【基金】 国家科委“八六三”计划资助
- 【文献出处】 北京师范大学学报(自然科学版) ,JOURNAL OF BEIJING NORMAL UNIVERSITY , 编辑部邮箱 ,1994年02期
- 【分类号】TN364.3
- 【被引频次】2
- 【下载频次】54