【摘要】 本文对ｐＨ－ＩＳＦＥＴ恒流输出时漂特性进行了一系列实验研究，获得时漂随器件浸泡时间的变化规律，指出造成时漂的原因之一，是敏感膜水化层带有负电荷，使器件出现附加阈值电压上ΔＶＴ（ｔ），而水化层厚度随浸泡时间而增加，造成ΔＶＴ（ｔ）的正向时漂．提出了器件阈值电压时漂的初步物理解释．更多还原

【Abstract】 Abstract Drift characteristics of PH-ISFET output in constant current are studied.Time response of the drift is given. It is verified that the drift is due to hydrolysis layer with negative charge on sensitive film. The layer causes an attached threshold yoltage ΔVT of the device. The thickness of the layer grows slowly with soaked time in solution, and causes a time response of ΔVT A threshold voltage response model of the device is given. Experimental results are explained with the model.更多还原