【摘要】 本文首次报道了δ掺杂的赝形高电子迁移率晶体管结构（ＨＥＭＴｓ）Ａｌ０．３０Ｇａ０．７０Ａｓ／Ｉｎ０．１５Ｇａ０．８５Ａｓ／ＧａＡｓ中的傅里叶变换光致发光光谱．观察到了ｎ＝１电子子带和ｎ＝２电子子带到ｎ＝１重空穴子带的强发光峰以及ｎ＝２电子子带到浅受主的弱发光峰，由于费米能级处在高于ｎ＝２电子子带的位置上，没有观察到属于费米边的发光峰，证实了理论上所预言的δ掺杂ＨＥＭＴＳ系统具有转移效率高的优点．更多还原

【Abstract】 Abstract We report the Fourier Transform Photoluminescence studies of δ-doped pseudomorphic high-electron-mobility transister structures (HEMTs) of Al0.30Ga0.70As/ In0.15Ga0.85 As/GaAs. In addition to two strong PL peaks related to the recombination between electrons in the first (n = 1),second (n =2) subband and first heavy holes subband, a weak PL peak related to the recombination between n = 2 electrons and shallow acceptors is observed and assigned, in contrast to the Fermi-edge singularity which is widely recognized and investigated in the literature. We also prove that there is greater transfering efficiency in δ-doped HEMTs, which has been theoretically expected.更多还原