【摘要】 本文首次报道离子注入对一系列多孔硅性质的影响．离子辐照引入多孔硅成孔中心，影响多孔硅的形成．随辐照剂量增加，ＰＬ谱峰波长红移，强度下降，半高宽变窄，使制备多孔硅发光图形成为可能．更多还原

【Abstract】 Abstract Tile ion irradiation produces nuclei for the pore formation of the porous Si and makes the porosity decreasing. With increasing irradiation doses, the PL peak wavelength red shifts, PL intensity decreases and FWHM narlows. This provides a possibility for the formation of the porous Si luminescent pattern.更多还原