【摘要】 本文基干决定载流子迁移率的晶格散射、电离杂质散射、表面粗糙散射等三种主要散射机制的考虑，提出了一个有较明确物理意义的精度和实用性兼顾的ＭＯＳＦＥＴ反型层中载流子迁移率半经验模型．模型适用的温度范围为５Ｋ～３７０Ｋ，沟道掺杂浓度范围为１×１０　１＋ｃｍ－３－１×１０　１８ｃｍ－３．模型的计算结果同实验数据符合很好．更多还原

【Abstract】 Abstract A dew physically-based semi-empirical carrier mobility model for the MOSFET inversion layer has been developed by accounting for phonon scattering, Coulomb scattering as well as surface roughness scattering. The new model is suitable for use in the temperature range 5K-370K and the channel doping range 1 ×1014 cm-3-1×1018cm-3. The calculated results using our model are in good agreement with experimental data.更多还原