【摘要】 本文报道了采用倒置交错结构（Ｔａ／（Ｔａ２Ｏ５）ＳｉＮｘ／ｉｎ＋ａ－Ｓｉ／Ａ１）的ＴＥＴ矩阵研究结果．其关态电流（Ｉ_ｏｆｆ（－５Ｖ））在５—７×１０￣－１４Ａ（对Ｗ／Ｌ＝１０），开态电流Ｉ_ｏｎ（Ｚ０Ｖ）大于１０μＡ，Ｉ_ｏｎ／Ｉｏｆｆ在１０８量级，场效应迁移率可达０．７９ｃｍ２／Ｖ．ｓ．更多还原

【Abstract】 Abstract The research results on the array of inverted staggered a-Si TFT withthe structure of Ta/(Ta2O3) SiNx/i n+ a-St/Al have been reported. For the TFT’swith W/L = 10, their Off state current (Vg=-5V)is in the range of 5-7 X 10-14A and On state current (Vg= 20V) is over teD micro-ampere (uA). The On/Offcurrent ratio (Ion/Ioff ) is higher then 8 order of magnitude. The factors effecting theOff state current and the process condition in order to get the good results havebeen analyzed.更多还原