【摘要】 研究了Ｚｎ^＋离子注入ｐ－ＧａＰ半导体所引起的缺陷。在电流密度为０．０３μＡ／ｃｍ^２下，将注入Ｚｎ^＋离子剂量为１×１０１^１４离子／厘米^２的ＧａＰ样品腐蚀出蚀坑后用ＳＥＭ观察，结果表明，在离子注入区域有缺陷形成。更多还原

【Abstract】 The defect induced by Zn+ion-implanted in p-type GaP is studied. P-type GaP was implanted with Zn+ion at 120keV in a dose of 1×10(14) ions/cm2. With the current density of 0.33μA/cm2, the defect of GaP sample etched was observed by SEM measurement. The results indicate that there exists defect formation in the ion-implantation region.更多还原