【摘要】 用阳极氧化电压谱图技术分析Ｎｂ／ＡｌＯｘ／Ｎｂ约瑟夫森结中ＡｌＯ２隧道阻挡层（绝缘层）与Ｎｂ电极之间的介面特征并测量谱图阻挡层阳极氧化的电压宽度，发现这种电压宽度与阻挡层厚度密切相关．通过阻挡层阳极氧化电压宽度Ｖｗ和沉积Ａｌ厚Ｄ的关系测量，证实Ａｌ上ＡｌＯｘ的生长只取决于氧化条件而与沉积的Ａｌ层厚度无关．本文还提出了一种由Ｖｗ估算Ａｌ上生长的ＡｌＯｘ厚度的方法．实验证明，阳极氧化电压谱图技术是监测约瑟夫森结的介面特性和临介电流密度的有用工具，对高温超导结及其超导器件的开发起着重要的作用．更多还原

【Abstract】 Using anodisation profiles, we have analyzed the AlOx tunneling barrier in a Nb/AlOx/Nb Josephson junction. Our studies focused on the interfaces of the Nb/AlOx/Nb Josephson junctions. We measured the voltage width Vw at the SlOx barrier in the profiles and deposition Al layer thickness and found that it is closely related to the barrier thickness, and verified that the AlOx growth on Al only depend on deposition Al thickness from the voltage width in this peper.By comparing the measured profiles with the junction characteristics we comfirmed that Anodisation Voltage Spectroscopy is a useful tool to analyse the tunneling barrier interface characteristics and critical current density of Josephson junctions. And critical current density of Josephson junctions. And it is also necessary for developing high To superconducting junctions and devices.更多还原