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平面工艺硅探测器的温度性能研究
TEMPERATURE PROPERTIES STUDY OF THE PLANAR PROCESS Si DETECTOR
【摘要】 平面工艺硅探测器有可能成为适合实际应用的X射线探测器。文章介绍了实验装置,系统地测量了-20℃到+50℃温度范围内探测器的温度性能,并对结果进行了初步的分析。
【Abstract】 The planar process Si detector is a kind of new type charged particles detector with fineproperties, it is possibly made X-ray detector suitable to the practical applications. In order to re-search into this possibility, detector temperature properties must be studied. In the paper experi-ment apparatus is introduced, temperature properties of the planar process Si detector are moresystematically measured, the temperature range is from -20℃ to +50℃. The results are pre-liminarily analyzed.
- 【文献出处】 原子能科学技术 ,Atomic Energy Science and Technology , 编辑部邮箱 ,1993年06期
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