【摘要】 本文介绍利用北京正负电子对撞机同步辐射软X射线光刻装置进行亚微米X射线光刻技术和深结构光刻的实验研究。通过对曝光剂量、掩模、抗蚀剂等工艺实验,初步得到适合于目前条件的较好的同步辐射X射线光刻工艺条件,并光刻出0.3μm的亚微米图形和抗蚀剂厚度为36μm深光刻图形。更多还原

【Abstract】 Experimental investigations on soft x^ray lithography technology using synchrotron radiation x-ray lithography apparatus of BEPC is presented in this paper. Based on the studies of the effects of various experimental conditions including exposure dose of x-ray, different masks and photoiesists etCf the optimum process suitable to present situations has been obtained. Using the masks fabricated in our laboratory, sub-micron patterns with rhe line width as narrow as 0.3nm and deep structure of photoresist with the thickness of 36nm have been obtained.更多还原