【摘要】 本文对30keV Si⁺和分子离子S₁F⁺注入半绝缘GaAs的行为进行了研,究注入Si⁺样品的Si原子纵向分布,与相同条件下用SICT模拟程序理论计算出的分布相一致,经灯光900℃10秒RTA,电激活率可达60％,电化学C—V测得的载流子纵向分布与注入态SIMS结果相同,可以获得近0.2μm的GaAS有源层。而注入分子离子SiF⁺样品,虽注入层较浅,但灯光退火后,电激活率很低。因此,用分子离子SiF⁺注入以形成GaAs超薄有源层是不相宜的。此外,根据X—射线双晶衍射的结果还对GaAs注入Si⁺和SiF⁺的退火行为进行了讨论。更多还原

【Abstract】 An investigation on the Si+ and SiF+ implantation in GaAs With 30 keV energy is depicted.The measured depth profile of implanted Si+ is in agreement with that calculated by SICT simulation program.After 900℃10" RTA with lamp the electiic activation reached up to 60%.The carrier depth profile measured by electrochemical C-V method coincided with that measured by SIMS for pre-annealing implanted sample 0.2um thick activated layer was obtained.In case of SiF+ implantation the resultant doped layer was thinner. However,the electric activation of it remained quite low after RTA. So that to form thin activated layer of GaAs by SiF+ implantation isn’t applicable.Moreover,according to the lesults obtained by x-ray double crystal diffraction a discussion on the annealing behavior of Si+ and SiF+ implantation in GaAs are presented.更多还原