【摘要】 报道了电沉积法制备多晶砷化镓（GaAs）薄膜的工艺。利用扫描电子显微镜、X射线衍射仪、分光光度计和C-V测试仪对薄膜进行了测试,其成分为Ga_0.91As_1.09。根据Mott-Schottky曲线,计算了薄膜的能带位置。最后测量了Ga_0.81As_0.09/ 电解液结的光电化学特性。更多还原

【Abstract】 Electro-deposition technology for preparing GaAs films is described. The characteristics of the films are measured by using SEM, X-ray diffractometer, Spectro-photometer and C-V tester. Results show that the atomic percentage of electro-deposition film is Ga0.91As1.09. On the basis of Mott-Schottky plot, the positions of energy band are found. The photoelectro-chemical characteristics of Ga0.91As1.09/electrolyte junction are also measured.更多还原