节点文献

高压金属场限环的研究

A Study on High-Voltage Metal Field-Limited-Rings

  • 推荐 CAJ下载
  • PDF下载
  • 不支持迅雷等下载工具,请取消加速工具后下载。

【作者】 张硕吴正元

【Author】 Zhang Shuo and Wu ZhengyuanDeft, Solid-State Electronics ,Huazhong University of Sci. & Technol. 430074.Wuhan,. Hubei

【机构】 华中理工大学固体电子学系华中理工大学固体电子学系 湖北武汉430074湖北武汉430074

【摘要】 平面功率器件由于终端pp结的曲率效应,其高压阻断能力受到限制,为了提高高压阻断能力,本文研究了金属场限环的工作机理,进行了金属场限环结构参数的设计,阐述了其制造工艺和实验结果;并和扩散场限环进行了比较,证实了金属场限环是一种工艺简单、对工艺要求低的高压终端技术。

【Abstract】 The planar power device’s capability of blocking high voltage is limited due to the curvature effects resulting from its terminal p-n junction. The physical principle of metal field-limited-rings has been studied and analyzed to achieve higher breakdown voltage. The structure parameters of the metal ring are designed. The processing technology for metal field-limited-rings is described and test results are given. A comparison with diffused field-limited-rings shows that the metal field-limited-ring is easier to make and less sensitive to process variations.

  • 【被引频次】2
  • 【下载频次】50
节点文献中: 

本文链接的文献网络图示:

本文的引文网络