【摘要】 本工作用射频溅射法制备出非晶和微晶锗氢膜（a-Ge∶H 和μc-Ge∶H）.研究了衬底温度对薄膜光学、电学及结构性能的影响.结果表明:衬底温度 T_?<290℃,沉积出a-Ge∶H 膜;Y_?≥290℃沉积出μc-Ge∶H 膜.其结构、光电性能均当 T_?≥290℃时有明显的变化.更多还原

【Abstract】 Hydrogenated amorphous Ge(a-Ge:H)and microcrystalline Ge(μc-Ge:H)thin films were prepared by the RF sputtering method.The effects of substrate tem-perature(T.)on the optical and electrical and structural characteristics of the films werestudied.The experimental results show that the μc-Ge:H films are formed at T,290℃ and the photoelectric properties are varied obviously at that temperature.更多还原