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In_1-xGa_xAs材料的LP-MOVPE生长

In₁-xGa_xAs Material Growth by LP-MOVPE

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【Author】 Zhu Jintian, Yang Shuren, Chen Baijun , Hu Lizhong, Wang Benzhong, Liu Baolin, Wang Zhijie, Liu Shiyong(National Integrated Optoelectronics Laboratory, Jilin University Region, Department of Electronic Science, Jilin University, Changchun, 130023)

【机构】集成光电子学国家重点联合实验室吉林大学实验区；集成光电子学国家重点联合实验室吉林大学实验区吉林大学电子科学系；长春 130023；吉林大学电子科学系；长春 130023；

【摘要】本文研究了用低压金属有机化学气相外延（LP-MOVPE）技术,以三甲基镓（TMG）、三乙基铟（TEIn）和AsH₃为原,在（100）InP衬底上生长In_1-xGa_xAs外延层的生长条件,并用X射线单晶衍射仪和光电子能谱（XPS）仪给出了不同TEIn与TMG摩尔流量比下外延层的测量结果.更多还原

【Abstract】 The present paper reports the growth conditions of In1-xGaxAs epilayers grown on (100) InP substrates by low pressure metalorganic chemical vapor epitaxy (LP-MOVPE) technique with trimethylgallium(TMG) , triethylindium(TEIn) and AsH3 as group Ⅲ and group Ⅴ sources, respectively. The epilayers grown in different ratios of TEIn to TMG were measured with a X-ray single crystal diffractometer and a X-ray photoelectronic spectrometer.更多还原