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硅片背面激光损伤的吸杂效果

Gettering effect of laser induced damage on a silicon wafer backside

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【作者】 孙金坛; 陈军宁;

【Author】 Sun Jintan, Chen Jungning (Applied Physics Department, Hefei University of Technology, Hefei 230009)

【机构】 合肥工业大学应用物理系; 合肥工业大学应用物理系 合肥 230009; 合肥 230009;

【摘要】 本文介绍了硅片背面激光损伤吸杂实验,用金相显微镜观察证实了高温退火后激光损伤的热稳定性,研究了激光损伤对氧化层错(OSF)和载流子寿命的影响,用中子活化分析法测出了吸杂效果。

【Abstract】 The gettering experiment of laser irradiation damage on the back surface of a silicon wafer is presented. It is observed by a microscope that the defects induced by laser after high temperature annealing are thermally stable. It is examined that the oxidation induced stacking faults and the minority carrier lifetime are affected by laser damage gettering. The gettering effect is studied by neutron activation analysis.

  • 【文献出处】 中国激光 ,Chinese Journal of Lasers , 编辑部邮箱 ,1993年03期
  • 【下载频次】47
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