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电子密度对PCVD制备SnO2导电薄膜的影响

The Effect of Plasma Electron Density on the Properties of SnO2 Film Prepared with PCVD

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【作者】 刘祖黎陈俊芳朱大奇刘大明

【Author】 Liu Zuli Chen Junfang Zhu Daqi Liu Darning

【机构】 华中理工大学物理系华中理工大学物理系

【摘要】 利用双探针测得了管式射频等离子体反应器内电子密度的轴向和角向分布,并制得了SnO2透明导电薄膜.实验表明,薄膜的沉积速率、电学性能及结晶形态受等离子体电子密度的影响较大.在电子密度高的地方,薄膜沉积速率快,薄膜电阻低,其薄膜的晶粒也均匀细微密集.

【Abstract】 The relationships between the electron density distributions and the properties of SnO2 film in PCVD are studied. The plasma electron density distributions along the axial and angular directions are diagnosed by a double probe. Experimental results show that the film depositing rates ,the electrical properties of SnO2 film and the crystalline state strongly depend on the plasma electron density. Where the electron density is high, the film depositing rate is also high and the sheet resistance of SnO2 film is low; the crystalline state of SnO2 film is uniform and highly concentrated.

【基金】 国家自然科学基金资助项目
  • 【被引频次】3
  • 【下载频次】33
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