【摘要】 本文根据nMOS晶体管的物理特性,对构成多值nMOS电路的基本单元——二值反相器,源极跟随器和分压器等形式电路进行了较细致的分析,并用SPICEⅡ模拟给出了各种曲绒.对多值nMOS电路中阈值检测所采用的两种方法,即改变几何比和多阈值法进行比较的结果表明:多阈值法具有更好的转移特性.更多还原

【Abstract】 Based on the physical characteristics of the nMOS transistor, the basic circuit units-binary inverter, source follower and voltage divider for constructing multivalued nMOS circuits are analysed in detail. Various related curves of these basic circuit units are given by simulation with SPICE Ⅱ . Comparison between two kinds of threshold detection in multivalued nMOS circuits by controlling geometry ratio and multilevel threshold voltage shows that the latter has better transfer characteristics.更多还原