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镍、铅、LB膜对n-Si光电极的修饰

The Modification of Ni, Pb and LB Films on the Behavior of n-Si Photoelectrode

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【作者】 邓薰南印建华范钦柏沈增德梁培辉张伟清

【Author】 Deng, Xun-Nan~* Yin, Jian-Hua Fan, Qin-Bai Shen, Zen-De(The Research Center of Electrochemistry, Shanghai University of Science and Technology, Shanghai, 201800) Liang, Pei-Hui Zhang, Wei-Qing(Shanghai Institute of Optics and Fine Mechanics, Academia Sinica, Shanghai, 201800)

【机构】 上海科学技术大学电化学研究室中国科学院上海光学精密机械研究所中国科学院上海光学精密机械研究所 上海 201800上海 201800

【摘要】 本文研究了金属(镍、铅)与Langmuir-Blodgett膜对n-Si电极光电化学行为的影响,观察到镍与铅能增强该电极的能量转换效率与稳定性,测定和讨论了八种有机物制得的LB膜对n-Si/Ni电极的修饰作用,最佳的长链香豆素LB膜使其效率倍增,还研究了具有MIS器件结构的Si/LB/Al电极的光电化学行为,发现它具有良好的光电效应。

【Abstract】 The effects of metal (Ni or Pb) and Langmuir-Blodgett films on the PEO behavior of n-Si have been studied.It is observed that Ni and Pb can improve the energy conversion efficiency and the stability of n-Si.The modification of LB films prepared with eight different organic compounds on n-Si/Ni have been determined and discussed, its efficiency has been doubled by the best one (long-chain coumarin LB film).The photoelectrochemical properties of Si/LB/Al electrode having the MIS structure has also been researched.It is discovered that it exhibits good photoeleotric effect.

【关键词】 LB膜单晶硅光电化学
【基金】 国家自然科学基金
  • 【文献出处】 化学学报 ,Acta Chimica Sinica , 编辑部邮箱 ,1993年05期
  • 【下载频次】26
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