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荷电粒子活化分析与沟道技术相结合测定砷化镓中硼的晶格位置分布
DETERMINATION OF THE LATTICE LOCATIONS OF BORON IN LEC GaAs BY CPAA/CHANNELING
【摘要】 利用荷电粒子活化分析和沟道技术相结合,通过测定从〈100〉、〈110〉及随机方向入射的氘束由10B(d,n)11C而产生的11C的放射性活度A〈100〉、A〈100〉及AT,经过理论计算,便可以得出硼在砷化镓中的晶格位置的分布。实验结果表明,在LEC(Liquid Encapsulated Czochralski)砷化镓中,大部分(>95%)硼原子占据砷化镓中的取代位置,这与其它方法得出的结论是一致的。
【Abstract】 By the combination of charged particle activation analysis (CPAA) with channeling, we have measured the 11C radioactivity from the reaction 10B(d,n)11C using irradiation of about 2. 7 MeV deuterons along <100>,<110> and random directions of LEC (Liquid Encapsulated Czochralski) grown GaAs. With our theoretical treatment based on the channeling theory, we have calculated the lattice location of boron in LEC GaAs. Our results show that the boron atoms are principally located at the substitutional position (>95%). These results are consistent with those obtained by other methods.
【Key words】 Charged particle activation analysis Channeling Gallium arsenide Boron Lattice location;
- 【文献出处】 核化学与放射化学 ,Journal of Nuclear and Radiochemistry , 编辑部邮箱 ,1993年01期
- 【被引频次】1
- 【下载频次】21