【摘要】 用慢正电子束配合多普勒湮没能谱测量技术研究N⁺离子注入镍样品产生的缺陷。由未注入的样品得到了正电子在镍中的扩散参数E₀=4.6keV。比较两个样品的S参数随入射正电子能量变化的曲线给出了95keV、6.4×10¹⁷/cm²剂量的N⁺注入镍样品所产生的缺陷分布;缺陷由表面一直延伸到190nm,浓度最大的区域在27—110nm。这些都与由Trim程序的Monte Carlo模拟计算的结果很好地符合。更多还原

【Abstract】 The defect distribution in Ni was studied using a slow positron beam after N+ions implantation with energy of 95 keV and dose of 6.4×1017/cm2. The positron diffusion parameter in defect- free Ni was derived to be Eo= 4.6 ±0.6keV. It was found that defects in the sample existed from surface to the depth of 190nm and the largest defect density was in the region from 27nm to 110nm. This result is in agreement with that of Monte Carlo simulation calculation.更多还原