节点文献
赝三元半导体致冷材料的研究
THE DEVELOPMENT OF THE PSEUDO-TERNARY SEMICONDUCTOR COOLING MATERIAL
【摘要】 研究出高优值系数的P型和N型赝三元系Bi2Te3-Sb2Te3-Sb2Se3半导体致冷材料,在室温附近最高优值可达到3.2×10-3/K以上。讨论了晶体结构特点和生长条件对材料温差电特性的影响。
【Abstract】 The high figure of merit p-type and n-type pseudo-ternary Bi2Te3-Sb2Te3-Sb2Se3 Semiconductor cooling materials, which give the highest figure of merit of 3.2×10-3/K at near room temperature, have been developed. The distinguishing feature of crystalline structure and the effect of growth conditions on the thermoelectric properties of matrial also discussed.
- 【文献出处】 哈尔滨师范大学自然科学学报 ,Natural Science Journal of Harbin Normal University , 编辑部邮箱 ,1993年04期
- 【被引频次】1
- 【下载频次】16