【摘要】 用自制常压MOCVD装置,在Si衬底上生长GaAs和AlGaAs外延层,在高温去除Si衬底表面氧化膜之后,采用两步法,即低温生长过渡层,再提高温度生长外延层。得到了表面镜面光亮的优质GaAs和AlGaAs外延层。X射线双晶衍射仪测试GaAs外延层,其回摆曲线半峰宽是200孤秒,GaAs和AlGaAs外延层在77K温度下,PL谱半峰宽分别是17meV和24meV。更多还原

【Abstract】 High guality epilayers of GaAs and AlGaAs on Si substrates were obtained in a self-made atmospheric pressure MOCVD system. After high temperature annealing of Si substrates, two-step growth method were used in growth of GaAs and AlGaAs epilayers, The epilayer of GaAs on Si were measured by x-ray double-crystal diffractometry. The half-width of the peak of the rocking curve of the GaAs epilayer was 200 arc sec. The half-width of the PL spectrum at 77K of GaAs and AlGaAs was 17meV and 24meV respectively.更多还原