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安培力微观机制探原
RESEARCH FOR THE MICROMECHANISM OF AMPER’S FORCE
【摘要】 通过对磁场中载流金属导体内电子或半导体内载流子的受力分析,以及它们和金属或半导体晶格之间的相互作用,阐明了安培力的经典微观起源。
【Abstract】 The classical micromechanism of Ampere’s force can be explained by analysing the forces on the electrons in a current-carrying metal conductor or on the carriers in a semiconductor and the interaction between the electrons and the crystal lattice of metal or between the carriers and the crystal lattice of semiconductor.
【关键词】 霍尔电场;
洛仑兹力;
迁移率;
霍尔迁移率;
空穴;
【Key words】 Hall electric field; Lorentz force; mobility; Hall mobility; hole;
【Key words】 Hall electric field; Lorentz force; mobility; Hall mobility; hole;
- 【文献出处】 广西师范大学学报(自然科学版) ,Journal of Guangxi Normal University(Natural Science) , 编辑部邮箱 ,1993年01期
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