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Al/LB绝缘膜/Si结构界面态研究
Detection of Interface Traps in MIS Structures with LBPI Films
【摘要】 I—V特性法表明单层LB聚酰亚胺膜(~0.5nm)MIS结构的界面态密度为1012~1013cm-2eV-1。对11和41层LB聚酰亚胺膜,DLTS测试得到的界面态密度分别为1012~1013和1011~1012cm-2eV-1。所有结果表明,在硅禁带中央附近具有较大的界面态密度。
【Abstract】 Interface traps in Al/LB and mono-(~0.5nm)or multi-layer poly-imide (PI) films/Si structures are studied. The determination of the interface trap parameters is performed by using I-V method and deep level transient spec-troscopy (DLTS). Their densities are in the range of 1012-1013 cm-2eV-1(monolayer and eleven layers) and of 1011-1012 cm-2eV-1 (forty-one layers). It is very interesting that there is a maximum near the silicon midgap.
- 【文献出处】 固体电子学研究与进展 ,Research & Progress of Solid State Electronics , 编辑部邮箱 ,1993年03期
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