【摘要】 用深能级瞬态谱技术研究了快速热氮化SiO_xN_y膜界面态密度及界面态俘获截面特性,分析了Si/SiO_xN_y界面的DLTS理论,结果表明,快速热氮化SiO_xN_y膜的界面态密度随禁带中能量呈现“U”形分布,该种薄膜界面态俘获截面在禁带中的能量分布近似呈现指数规律,且禁带中央附近的界面态俘获截面比价带顶附近的俘获截面大得多,影响微电子器件电学特性的界面态主要仍是禁带中央附近的界面能态。结果还给出了DLTS技术与雪崩热电子注入法测试SiO_xN_y膜界面态密度能量分布的比较,得到两种不同方法的研究结果基本一致。文中并对实验结果进行了分析与讨论。更多还原

【Abstract】 This paper studies the interface state density and interface state cap-ture cross section of thin rapid thermal nitrided SiOxNy film by the deep level tran-sient spectroscopy technique, and analyses the DLTS theory of Si/SiOxNy interface. The research results indicated that the changing relationship of interface state density in rapid thermal nitrided SiOxNy film with forbidden band energy presented "U" form distribution. The energy distribution on interface state capture cross section for the thin film in forbidden band presented exponential regularity. The interface state capture cross section near midgap is much larger than the that near va-lence band top. The interface state affecting obviously electrical characteristics of micro-electron device is mainly the interface state near midgap. Also given is the comparison of energy distribution on interface state density measured by the DLTS technique and the avalanche hot-electron injection technique in the SiOxNy film, in-dicating these two different methods are agreeablc roughly. The theoretical analyses and discussions of these experimental results are also made in this paper.更多还原