【摘要】 本文报导采用汞回流垂直浸渍液相外延方法,在CdTe或CdZnTe（111）面的衬底上生长Hg_1-xCd_xTe单晶,其厚度为20μm,面积为1.5×2cm²,组分x从0.18到0.7,组分均匀性Δx≈0.001。样品经热处理以后,x=0.2的n型样品电子浓度n≈1×10¹⁵cm^-3,电子迁移率μ≈10⁵cm²/v·s,p型样品空穴浓度p≈2×10¹⁶cm^-3,空穴迁移率μ≈300cm²/v·s,双晶衍射显示样品的半峰宽为90arc sec,X光貌相分析表明外延层晶体结构优良。样品的红外光谱测量,电学参数测量以及载流子寿命测量表明样品具有优良的光电性质。更多还原

【Abstract】 The growth of liquid-phase -epitaxial （LPE） layer Hg_1-xCd_xTe on CdTe or CdZnTe（111）substrate by means of vertical dipping system has been reported in this paper. The samples of LPE Hg_1-xCd_xTe with composition, （x, from 0.18 to 0.70）and composition uniformity of △x≈0.001 have been grown. The thickness and the area of LPE sample are about 20μm and 1.5×2cm² respe- ctively. After annealing for n-type Hg_1-xCd_xTe samples with x=0.2, the electron concentration and mobility are about n≈1×1015cm^-3 and μ≈105cm²/v·s at 77K respectively, and the hole concentration and mobility are about p≈2× 1016cm^-3, μ≈300cm²/v·s at 77K respectively for p-type samples. The half peak wicth of 90" at X-ray double crystal diffraction measurements was determined for the LPE layer. It shows that the good quality of the LPE samples has been demonstrated by means of the measurements of X-ray topograph analysis, infrared spectroscopy, electrical properties, carrier life-time etc.更多还原