【摘要】 以离子背散射和二次离子质谱分析了大剂量N~+离子注入A1形成的A1/A1N/A1多层结构。基于离子注入形成A1N埋层的机理,利用计算机程序动态模拟A1N层的形成过程及终态结构。研究发现,N/A1原子比饱和于A1N化学组分比,模拟与实验结果符合得很好;低能注入能降低形成A1N层的临界剂量,且A1/A1N界面更陡。更多还原

【Abstract】 The Al/A1N/Al multilayer structure formed by implantation of largo dose N~+ ions into aluminum were analyzed by RBS and SIMS measurement. A computer program has been set up to simulate the formation process and final structure of AlN layer on the basis of the formation mechanism of AlN buried layer by ion implantation. It is found that N/Al atom ratio saturates at the stoichiometry of AlN and there is good agreement between the simulation and experiment result. Low energy implantation will reduce the critical dose for AlN layer formation and the Al/AlN interface will be sharper.更多还原