【摘要】 研究了一种新型AlGaAs/GaAs穿通型光电晶体管。其独特的发射极和隔离环电极结构能消除器件周边的表面复合,减小发射极面积和电容。从而可以提高器件的灵敏度和工作速度,并改善噪声特性。研制出的光电晶体管在入射光功率为0.4μW时,器件灵敏度达5500μA/μW,电流增益高达11000,光增益为7700。将它用做光通讯中的探测器具有重要前景。更多还原

【Abstract】 The paper studies very high sensitivity AlGaAs/GaAs punch-through type heterojunctionphototransistors (PTPT). They are promising as photo detectors for optical communication systems. Thepunch-through type HPT-PTPT (i. e. HPT is designed to operate in such a case that the base region isdepleted and punch-through between the emitter and the collector occurs) may perform a high Early-effectenhanced gain. The AlGaAs/GaAs PTPT with an novel guard ring emitter structure is designed andfabricated. The novel guard emitter structure reported here may decrease the capacitance of E-B junctionand surface recombination. It has the advantage of increasing the device speed and gain and decreasing noiseof device under low incident power condition. Sensitivity of 5500(μA/μW) and current gain of 11000 andoptical gain of 7700 are obtained in the condition that input photo power is 0. 4μW. Those values are to theauthors’ knowledge the highest to date reported in any optical detectors. The sensitivity of the PTPT mayincrease further with the decrease of the incident power更多还原