【摘要】 首次报告了采用Langmuir—Blodgett(LB)膜作为抗蚀层进行X射线刻蚀的研究。所用PMMA LB膜的膜厚为1.8～6.3nm,均在15dyne/cm下提拉成膜。在360mA·min的低入射剂量X射线下曝光,获得0.2～0.3μm的分辨率(受限制于所用掩膜片的最高分辨率,0.2～0.3μm)。讨论了LB膜作为抗蚀层在发展由亚微米向纳米量级进行X线刻蚀的潜在作用。更多还原

【Abstract】 To improve pattern resolution of X-ray lithography in the region from submicro to nanometer, a new class of Langmuir-Blodgett (LB) films as ultrathin is investigated for the first time. Experimental results presented here show that PMMA LB films with thickness 1.8～6.3nm can be exposed with very low radiative dose of X-ray to yield high-resolution of 0.2～0.3μm (limited by the feature resolution of X-ray mask used here). Because the pinhole density in PMMA LB films is considerably lower than the density in spin-cast PMMA films of comparable nano-meter thickness, the prospect of using LB films as ultrathin resists in fabrication of submicro to nanometer structures seems to be very bright.更多还原