【摘要】 报道了Si衬底上分子束外延(MBE)生长渐变折射率分别限制异质结构GaAs/AlGaAs单量子阱激光器的实验研究结果。室温下脉冲激射阈值电流约500mA,77K最小脉冲激射阈值电流为20mA。更多还原

【Abstract】 Successful fabrication of graded-index seperate-confinement heterostructure GaAs/AlGaAs single quantum well (GRIN—SCH GaAs/AlGaAs SQW) diode lasers grown on Si substrates by molecular beam epitaxy (MBE) is reported.The lasets have typical pulsed 300k threshold currents of 500 mA,and 77k threshold current of 20mA.更多还原