【摘要】 采用LP-MOVPE技术,研制出InGaAs/InP双异质结宽接触和质子轰击条形激光器。宽接触室温阈电流密度为1.6kA/cm~2。质子轰击条宽为8μm,腔长为320μm时,室温阈电流为180mA。更多还原

【Abstract】 InGaAs/InP double heterostructure wafers were grown by low pressure MOVPE. Broad contact and stripe geometry (formed by proton bombardment) InGaAs/InP DH Lasers were fabricated. The room temperature threshold current density of the broad contact lasers was 1.6kA/cm~2. The room tempersture threshold current of the stripe geometry lasers (width=8 μm and cavity length=320μm) was 180mA.更多还原