【摘要】 微电子和光电子材料兼容的技术是未来功能器件中的一个重要方向,它可以将成熟的Si集成工艺和GaP优良的发光特性结合起来,完成新一代微型显示和集成光学元件。我们用MOCVD方法在Si衬底上异质外延GaP薄膜,通过X光双晶衍射和能谱分析,在国内用MOCVD方法首次获得了GaP/Si的单晶薄层,并研究了它们的结构特性。更多还原

【Abstract】 The techniques combining microelectronic materials with optoelectronic’s are important aspects of functional devices in future. Because of its small lattic mismatch with Si(≤0.4％),GaP has been recognized as the first candidate for attempting Ⅲ/Ⅴ-on-Si epitaxial growth. One objective of GaP/Si structure is to achieve monolithic integration of GaP light-emitting diodes on large area, low cost and high thermal conductivity Si substrates. Heteoepitaxy of GaP film grown by MOCVD on silicon was investigated. The structure properties of the films have been measured using double crystal X-ray diffractometry (DCX)and electron microscope. The DCX rocking curves and energy dispersion spectrum show that a single crystal GaP/Si film has been obtained.更多还原