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高临界电流密度K3C60超导单晶薄膜的合成
SYNTHESIS OF THE SINGLE CRYSTAL K3C80 THIN FILMS WITH HIGH CRITICAL CURRENTS
【摘要】 我们在云母(001)面上合成高质量的K3C?单晶薄膜。在正常态下它表现出金属性的电阻一温度的依赖关系,且符合关系式p(T)=a+bT2。单晶薄膜在22K附近具有很陡的超导转变,转变宽度(电阻值由90%到10%)小于700mK,零电阻温度为21K,连续直流测量出的临界电流密度高达50000A/cm2。
【Abstract】 We have synthesized high-quality single crystle K3C60 thin films on (001) mica substrates. The normal state shows a classical metallic dependence of R-T and it can be fit to the form of p (T)=a+bT2, where R is the electrical resistivity and T is the temperature. The film has a sharp transition to superconductivity near 22K, with a 10% to 90% width less than 700mK. The critical current density measured by continous dc current is as high as 50000A/cm2, thus shed a light on the potential practical use of this unique material, and the preliminary analysis indicate that Jcis proportional to 1- (T/Tc)3.
- 【文献出处】 低温物理学报 ,Chinese Journal of Low Temperature Physics , 编辑部邮箱 ,1993年04期
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