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高临界电流密度K3C60超导单晶薄膜的合成

SYNTHESIS OF THE SINGLE CRYSTAL K3C80 THIN FILMS WITH HIGH CRITICAL CURRENTS

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【作者】 张晓东赵文兵叶志远张金龙李传义尹道乐顾镇南周锡煌金朝霞

【Author】 X.D.Zhang W.B.Zhao Z. Y. Ye J.L.Zhang C.Y.Li D.L.YinDepartment of Physics Peking Uaiv. , Beijing 100871Z. N. Gu X.H.Zhou Z.X.JinDepartment of Chemistry, Peking Univ. , Beijing 1000871

【机构】 北京大学物理系北京大学化学系北京大学化学系 北京 100871北京 100871北京 100871

【摘要】 我们在云母(001)面上合成高质量的K3C?单晶薄膜。在正常态下它表现出金属性的电阻一温度的依赖关系,且符合关系式p(T)=a+bT2。单晶薄膜在22K附近具有很陡的超导转变,转变宽度(电阻值由90%到10%)小于700mK,零电阻温度为21K,连续直流测量出的临界电流密度高达50000A/cm2

【Abstract】 We have synthesized high-quality single crystle K3C60 thin films on (001) mica substrates. The normal state shows a classical metallic dependence of R-T and it can be fit to the form of p (T)=a+bT2, where R is the electrical resistivity and T is the temperature. The film has a sharp transition to superconductivity near 22K, with a 10% to 90% width less than 700mK. The critical current density measured by continous dc current is as high as 50000A/cm2, thus shed a light on the potential practical use of this unique material, and the preliminary analysis indicate that Jcis proportional to 1- (T/Tc)3.

  • 【文献出处】 低温物理学报 ,Chinese Journal of Low Temperature Physics , 编辑部邮箱 ,1993年04期
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