节点文献
半导体陶瓷致冷材料的性能与结构
STRUCTURE AND PROPERTIES OF SEMICODUCTOR CERAMIC COOLING MATERIALS
【摘要】 采用新的陶瓷工艺技术,在气氛保护条件下,通过固相烧结反应法制备出温差电多晶材料。对膺三元固溶体化合物 P 型(72%Sb2Te3+25%Bi2Te3+3%Sb2Se3)和 N 型(90%Bi2Te3+5%Sb2Te3+5%Sb2Se3)的掺杂陶瓷样品进行了性能与结构研究。找到了最佳工艺制度。样品性能参数为:N 型:α=186μV/K σ=1250Ω-1·cm-1 λ=14.7mW/(cm.K) Z=2.9×10-3/KP 型:α=220μV/K σ=900 Ω-1·cm-1 λ=14.0mW/(cm.K) Z=3.1×10-3/K
【Abstract】 Thermoelectric polycrystal ceramic materials were prepared by a new ceramictechnology.The specimens were sintered by solid reaction in a sealed evacuated quartz tube.The new ceramic cooling materials have a inhomogeneous structure, but higher mechanicalstrength and the thermoelectric properies.The P-type 72%Sb2Te3+25%Bi2Te3+3%Sb2Se3doped and N-type 90%Bi2Te3+5%Sb2Te3+5%Sb2Se3 doped were studied.High qualityBi2Te3-Sb2Te3-Sb2Se3 pseudo-ternary solid solution can be prepared under optimum technol-ogy conditions.The polycrystal ceramic materials have a obvious layered structure,but sinter-ing is closer.
- 【文献出处】 材料科学进展 , 编辑部邮箱 ,1993年03期
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